Low temperature (150 °C) fabrication of high-performance TiO2 films for dye-sensitized solar cells using ultraviolet light and plasma treatments of TiO2 paste containing organic binder

  • Shungo Zen
    The University of Tokyo 1 Department of Advanced Energy, , 5-1-5 Kashiwanoha, Kashiwa, Chiba 227-8568, Japan
  • Yuki Inoue
    The University of Tokyo 2 Department of Electrical Engineering, , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Ryo Ono
    The University of Tokyo 1 Department of Advanced Energy, , 5-1-5 Kashiwanoha, Kashiwa, Chiba 227-8568, Japan

書誌事項

公開日
2015-03-10
資源種別
journal article
DOI
  • 10.1063/1.4914873
公開者
AIP Publishing

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説明

<jats:p>Dye-sensitized solar cells (DSSCs) require annealing of TiO2 photoelectrodes at 450 °C to 550 °C. However, such high-temperature annealing is unfavorable because it limits the use of materials that cannot withstand high temperatures, such as plastic substrates. In our previous paper, a low-temperature annealing technique of TiO2 photoelectrodes using ultraviolet light and dielectric barrier discharge treatments was proposed to reduce the annealing temperature from 450 °C to 150 °C for a TiO2 paste containing an organic binder. Here, we measure the electron diffusion length in the TiO2 film, the amount of dye adsorption on the TiO2 film, and the sheet resistance of a glass substrate of samples manufactured with the 150 °C annealing method, and we discuss the effect that the 150 °C annealing method has on those properties of DSSCs.</jats:p>

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