Memristive magnetic tunnel junctions with MnAs nanoparticles

DOI PDF 参考文献20件
  • Pham Nam Hai
    The University of Tokyo Department of Electrical Engineering and Information Systems, , 7-3-1 Hongo, Bukyo-ku, Tokyo 113-8656, Japan
  • Masaaki Tanaka
    The University of Tokyo Department of Electrical Engineering and Information Systems, , 7-3-1 Hongo, Bukyo-ku, Tokyo 113-8656, Japan

説明

<jats:p>We observed clear memristive switching of the tunnel resistance of magnetic tunnel junctions consisting of MnAs/GaAs/AlAs/GaAs:MnAs nanoparticles when a loop of pulse currents was applied on the junctions. Here, the GaAs:MnAs layer contains NiAs-type hexagonal MnAs ferromagnetic nanoparticles embedded in a GaAs matrix. The memristive switching was observed at current densities as low as 103 A/cm2 and was insensitive to external magnetic fields. A model of memristive switching was proposed assuming the trap and release of space charges in the GaAs matrix that affect the electrostatic potential of the MnAs nanoparticles under the Coulomb blockade regime. Our model is consistent with the observed temperature dependence of the memristance ratio.</jats:p>

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