Anisotropic Spin-Orbit Torque through Crystal-Orientation Engineering in Epitaxial 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Pt</mml:mi></mml:math>

Ryan Thompson, Jeongchun Ryu, Gaeun Choi, Shutaro Karube, Makoto Kohda, Junsaku Nitta, Byong-Guk Park

doi:10.1103/physrevapplied.15.014055

One of the main objectives of spintronics is to provide power-efficient switching of magnetic layers through electrical means, and in order to achieve this goal, alternate material systems with enhanced spin-orbit torque (SOT) must be engineered. In this work we provide evidence of anisotropy in the SOT and spin Hall effect (SHE) in epitaxial $\mathrm{Pt}$(110) grown on $\mathrm{Mg}\mathrm{O}$(110) single-crystal substrates, and find that the spin Hall angle and the dampinglike torque are 20% larger when current is applied along the [001] crystallographic direction as compared to [$1\overline{1}0$], leading to an equivalent reduction in switching current density along [001]. The anisotropy in SOT is attributed to the bulk contributions of the SHE in the $\mathrm{Pt}$ layer through its anisotropic resistance in this specific orientation. Measurements additionally suggest that the Rashba-Edelstein effect at the $\mathrm{Pt}$/$\mathrm{Ti}$ interface due to the $\mathrm{Pt}$(110) surface has a non-negligible effect on the spin diffusion length and SOT. By providing experimental evidence of the crystal orientation dependence of SOT-induced magnetization switching, this work helps to establish a path for energy-efficient magnetization switching through the alignment of devices with crystallographic directions of enhanced SOT generation.

Anisotropic Spin-Orbit Torque through Crystal-Orientation Engineering in Epitaxial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Pt</mml:mi></mml:math>

書誌事項

説明

収録刊行物

被引用文献 (3)*注記

参考文献 (52)*注記

関連プロジェクト

詳細情報詳細情報について

書き出し

問題の指摘