Undulation of sub-100nm porous dielectric structures: A mechanical analysis

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  • M. Darnon
    LTM/CNRS , CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France
  • T. Chevolleau
    LTM/CNRS , CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France
  • O. Joubert
    LTM/CNRS , CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France
  • S. Maitrejean
    CEA/LETI/Minatec/D2NT , 17 rue des Martyrs, 38054 Grenoble Cedex 09, France
  • J. C. Barbe
    CEA/LETI/Minatec/D2NT , 17 rue des Martyrs, 38054 Grenoble Cedex 09, France
  • J. Torres
    STMicroelectronics , Central R&D, 850 rue J. Monnet, 38926 Crolles Cedex, France

Abstract

<jats:p>In microelectronics technologies, patterning of sub-100nm width ridges capped with a titanium nitride mask can lead to undulations of the ridges detrimental to performances. This phenomenon is observed with highly compressive residual stress into the mask (&gt;2GPa), with dielectrics with low elastic properties (E&lt;2Gpa) and with high dielectric ridge heights (&gt;230nm). Experiments and simulations show that undulations can originate from buckling which allows the release of the strain energy initially stored in the mask. Simulations predict that the dielectric material undulations can become an issue for porous dielectrics integration in the next generations of integrated circuits (2016 and later).</jats:p>

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