Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure

DOI PDF 被引用文献2件
  • Mutsuo Ogura
    Department of Electrical Engineering and Computer Science, and Electronics Research Laboratory, University of California, Berkeley, California 94720
  • Wei Hsin
    Department of Electrical Engineering and Computer Science, and Electronics Research Laboratory, University of California, Berkeley, California 94720
  • Ming-Chiang Wu
    Department of Electrical Engineering and Computer Science, and Electronics Research Laboratory, University of California, Berkeley, California 94720
  • Shyh Wang
    Department of Electrical Engineering and Computer Science, and Electronics Research Laboratory, University of California, Berkeley, California 94720
  • John R. Whinnery
    Department of Electrical Engineering and Computer Science, and Electronics Research Laboratory, University of California, Berkeley, California 94720
  • S. C. Wang
    Research and Development Division, Lockheed Missiles and Space Company, Inc., Palo Alto, California 94304-1187
  • Jane J. Yang
    Space and Technology Group, TRW, One Space Park, Redondo Beach, California 92078

書誌事項

公開日
1987-11-23
DOI
  • 10.1063/1.98586
公開者
AIP Publishing

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説明

<jats:p>Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n- and p-type AlGaAs cladding layers for minority-carrier confinement. The far-field angle is 7°. The beam shape is nearly circular. However, the lasing spectrum is broad (2–3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edge-emitting laser diode are discussed.</jats:p>

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