Mobility studies of field-effect transistor structures basedon anthracene single crystals
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- A. N. Aleshin
- School of Physics and Condensed Matter Research Institute, Seoul National University ,Seoul 151-747, Korea and , St. Petersburg 194021, Russia
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- J. Y. Lee
- School of Physics and Condensed Matter Research Institute, Seoul National University ,Seoul 151-747, Korea
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- S. W. Chu
- School of Physics and Condensed Matter Research Institute, Seoul National University ,Seoul 151-747, Korea
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- J. S. Kim
- School of Physics and Condensed Matter Research Institute, Seoul National University ,Seoul 151-747, Korea
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- Y. W. Park
- School of Physics and Condensed Matter Research Institute, Seoul National University ,Seoul 151-747, Korea
説明
<jats:p>The charge carrier transport in anthracene single crystals has been studied by means of field-effect transistor (FET) structure. The FET mobility (μFET) revealed the nonmonotonous, reliant on gate-voltage (Vg), temperature dependence with the maximum μFET∼0.02cm2∕Vs at T∼170–180K and Vg∼−30V. At temperatures below 180K the mobility decreases and becomes thermally activated with the Vg-dependent activation energy Ea∼40–70meV governed by shallow traps. The space-charge-limited current is the dominant transport mechanism in FET structures based on anthracene single crystals.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 84 (26), 5383-5385, 2004-06-28
AIP Publishing