Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer

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  • Erick Omondi Ateto
    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-NE-17 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
  • Makoto Konagai
    Research Centre for Silicon Nano-Science, Tokyo City University, 8-9-18, Todoroki, Setagaya, Tokyo 158-8586, Japan
  • Shinsuke Miyajima
    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-NE-17 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

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<jats:p>We investigated the antireflective (AR) effect of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter and its application in the triple layer AR design for the front side of silicon heterojunction (SHJ) solar cell. We found that the nc-3C-SiC:H emitter can serve both as an emitter and antireflective coating for SHJ solar cell, which enables us to realize the triple AR design by adding one additional dielectric layer to normally used SHJ structure with a transparent conductive oxide (TCO) and an emitter layer. The optimized SHJ structure with the triple layer AR coating (LiF/ITO/nc-3C-SiC:H) exhibit a short circuit current density (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mrow><mml:msub><mml:mrow><mml:mi>J</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">s</mml:mi><mml:mi mathvariant="normal">c</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>) of 38.65 mA/cm<jats:sup>2</jats:sup>and lower reflectivity of about 3.42% at wavelength range of 300 nm–1000 nm.</jats:p>

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