Ion irradiation enhanced crystal nucleation in amorphous Si thin films

DOI PDF 被引用文献3件
  • J. S. Im
    Thomas J. Watson, Sr. Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125
  • Harry A. Atwater
    Thomas J. Watson, Sr. Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125

説明

<jats:p>The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500–580 °C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV.</jats:p>

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