Effect of DMSO Solvent Treatments on the Performance of PEDOT:PSS Based Organic Electrochemical Transistors

  • Leona V. Lingstedt
    Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany
  • Matteo Ghittorelli
    Department of Information Engineering University of Brescia Via Branze 38 25123 Brescia Italy
  • Hao Lu
    Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany
  • Dimitrios A. Koutsouras
    Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany
  • Tomasz Marszalek
    Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany
  • Fabrizio Torricelli
    Department of Information Engineering University of Brescia Via Branze 38 25123 Brescia Italy
  • N. Irina Crăciun
    Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany
  • Paschalis Gkoupidenis
    Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany
  • Paul W. M. Blom
    Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany

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<jats:title>Abstract</jats:title><jats:p>The conductivity of poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) can be strongly enhanced by treatment with high boiling solvents as dimethyl sulfoxide (DMSO). The effect of various DMSO solvent treatment methods on the performance of organic electrochemical transistors (OECTs) based on PEDOT:PSS is studied. The treatments include mixing PEDOT:PSS with DMSO before film deposition, exposing a deposited PEDOT:PSS film to a saturated DMSO vapor, and dipping a PEDOT:PSS film in a DMSO bath. Compared to dry PEDOT:PSS, operating in the OECT configuration causes a significant reduction of its conductivity for all treatments, due to the swelling of PEDOT:PSS by the direct contact of the conductive channel with the electrolyte. The dipping method gives rise to the highest OECT performance, reflected in the highest on/off ratio and transconductance. The improved conductivity and device performance after dipping arise from an enhanced charge carrier mobility due to enhanced structural order.</jats:p>

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