Elucidating the Mechanism of an RbF Post Deposition Treatment in CIGS Thin Film Solar Cells
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- Tim Kodalle
- PVcomB/Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstr. 3 12489 Berlin Germany
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- Marc D. Heinemann
- PVcomB/Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstr. 3 12489 Berlin Germany
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- Dieter Greiner
- PVcomB/Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstr. 3 12489 Berlin Germany
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- Hasan A. Yetkin
- PVcomB/Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstr. 3 12489 Berlin Germany
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- Michael Klupsch
- PVcomB/Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstr. 3 12489 Berlin Germany
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- Chen Li
- Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany
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- Peter A. van Aken
- Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany
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- Iver Lauermann
- PVcomB/Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstr. 3 12489 Berlin Germany
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- Rutger Schlatmann
- PVcomB/Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstr. 3 12489 Berlin Germany
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- Christian A. Kaufmann
- PVcomB/Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstr. 3 12489 Berlin Germany
書誌事項
- 公開日
- 2018-07-09
- 権利情報
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- http://onlinelibrary.wiley.com/termsAndConditions#vor
- DOI
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- 10.1002/solr.201800156
- 公開者
- Wiley
この論文をさがす
説明
<jats:sec><jats:label/><jats:p>The impact of a rubidium fluoride post deposition treatment (RbF‐PDT) on the material and device properties of Cu(In,Ga)Se<jats:sub>2</jats:sub> (CIGS) thin films and corresponding solar cells is investigated. The structure and device properties of CIGS with different PDT duration are compared. With longer PDT duration, which equals a higher amount of RbF deposited on the CIGS absorber layer, a clear trade‐off is observed between increasing open‐circuit‐voltage (<jats:italic>V</jats:italic><jats:sub>OC</jats:sub>) and decreasing fill factor (FF). An optimum of the PDT duration is found increasing the efficiency by about 0.8% (absolute) compared to the Rb‐free reference device. The mechanisms behind the increased <jats:italic>V</jats:italic><jats:sub>OC</jats:sub> are explored by various characterization methods and identified as a combination of increased carrier concentration and reduced recombination rates in the device. Possible origins for these mechanisms are discussed. Furthermore numerical simulations are used to analyze the detrimental effect of the PDT on the FF. It is found that thermally activated alkali migration into the transparent front contact could create acceptor states there, which could explain the observed FF‐loss.</jats:p></jats:sec>
収録刊行物
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- Solar RRL
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Solar RRL 2 (9), 1800156-, 2018-07-09
Wiley