Silicon field-effect transistor based on quantum tunneling

DOI PDF 被引用文献10件
  • J. R. Tucker
    Department of Electrical and Computer Engineering and Beckman Institute, University of Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, Illinois 61801
  • Chinlee Wang
    Department of Electrical and Computer Engineering and Beckman Institute, University of Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, Illinois 61801
  • P. Scott Carney
    Department of Electrical and Computer Engineering and Beckman Institute, University of Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, Illinois 61801

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<jats:p>This letter explores regulation of current flow within a silicon field-effect transistor by gate-induced tunneling through a Schottky barrier located at the interface between a metallic source electrode and the Si channel. The goal here is to forestall short-channel effects which are expected to prevent further size reductions in conventional devices when linewidths reach ∼1000 Å. Control of tunneling appears to be possible at minimum channel lengths L∼250 Å or less while simultaneously eliminating the need for large-area source and drain contacts, so that scaling of Si transistors could be significantly extended if this principle proves technically feasible.</jats:p>

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