Anti-twinning in nanoscale tungsten

  • Jiangwei Wang
    Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
  • Zhi Zeng
    Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
  • Minru Wen
    Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
  • Qiannan Wang
    Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
  • Dengke Chen
    Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
  • Yin Zhang
    Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
  • Peng Wang
    Center for X-Mechanics, Zhejiang University, Hangzhou 310027, China.
  • Hongtao Wang
    Center for X-Mechanics, Zhejiang University, Hangzhou 310027, China.
  • Ze Zhang
    Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
  • Scott X. Mao
    Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, USA.
  • Ting Zhu
    Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.

抄録

<jats:p>Tungsten nanowires showed an unexpected anti-twinning phenomenon, which is strongly size-dependent.</jats:p>

収録刊行物

  • Science Advances

    Science Advances 6 (23), eaay2792-, 2020-06-05

    American Association for the Advancement of Science (AAAS)

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