Good piezoelectricity of self-polarized thick epitaxial (K,Na)NbO3 films grown below the Curie temperature (240 °C) using a hydrothermal method
-
- Akinori Tateyama
- Department of Materials Science and Engineering, Tokyo Institute of Technology 1 , Yokohama 226-8502, Japan
-
- Yoshiharu Ito
- Department of Materials Science and Engineering, Tokyo Institute of Technology 1 , Yokohama 226-8502, Japan
-
- Yoshiko Nakamura
- Department of Materials Science and Engineering, Tokyo Institute of Technology 1 , Yokohama 226-8502, Japan
-
- Takao Shimizu
- Department of Materials Science and Engineering, Tokyo Institute of Technology 1 , Yokohama 226-8502, Japan
-
- Yuichiro Orino
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 3 , Yokohama 226-8502, Japan
-
- Minoru Kurosawa
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 3 , Yokohama 226-8502, Japan
-
- Hiroshi Uchida
- Department of Materials and Life Sciences, Sophia University 4 , Tokyo 102-8554, Japan
-
- Takahisa Shiraishi
- Department of Institute for Materials Research, Tohoku University 5 , Sendai 980-8577, Japan
-
- Takanori Kiguchi
- Department of Institute for Materials Research, Tohoku University 5 , Sendai 980-8577, Japan
-
- Toyohiko J. Konno
- Department of Institute for Materials Research, Tohoku University 5 , Sendai 980-8577, Japan
-
- Takeshi Yoshimura
- Department of Physics and Electronics, Osaka Prefecture University 6 , Osaka 599-8531, Japan
-
- Hiroshi Funakubo
- Department of Materials Science and Engineering, Tokyo Institute of Technology 1 , Yokohama 226-8502, Japan
抄録
<jats:p>Using a hydrothermal method, (K0.88Na0.12)NbO3 films were deposited at 240 °C on (100) cSrRuO3//(100)SrTiO3 substrates. Moreover, without any poling treatment, direct and inverse transverse piezoelectric coefficients, e31,f, near 0 kV/cm were approximately −5.0 C/m2 for the as-deposited film. This value was nearly unchanged following the application of an electric field and poling treatment, suggesting that as-deposited films are almost in a fully self-polarized state without the application of an electric field. As-deposited films with a thickness of up to 22 μm showed constant piezoelectricity without any poling treatment. The films did not crack or peel because of substrates due to the small thermal strain originating from the low deposition temperature. The figures of merit (FOM) for the vibration energy harvester [FOM = e31,f2/(ε0εr)] and sensor [FOM = e31,f/(ε0εr)] were estimated to be good at 32.8 GPa and –5.9 GV/m, respectively, primarily because of the low relative dielectric constant of ∼110. Furthermore, the piezoelectric voltage coefficient g31 [= d31/(ε0εr)] was estimated and demonstrated a high value of 0.073 Vm/N.</jats:p>
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 117 (14), 142903-, 2020-10-05
AIP Publishing