High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices

DOI PDF 被引用文献3件
  • C. A. Wang
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108
  • H. K. Choi
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108
  • S. L. Ransom
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108
  • G. W. Charache
    Lockheed Martin, Inc., Schenectady, New York 12301-1072
  • L. R. Danielson
    Lockheed Martin, Inc., Schenectady, New York 12301-1072
  • D. M. DePoy
    Lockheed Martin, Inc., Schenectady, New York 12301-1072

書誌事項

公開日
1999-08-30
DOI
  • 10.1063/1.124676
公開者
AIP Publishing

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説明

<jats:p>We report high-performance lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with a 0.5 eV band gap. The TPV structures were grown on GaSb substrates by organometallic vapor phase epitaxy at a lower temperature (525 °C compared to 550 °C) to improve the quality of the metastable GaInAsSb alloy. The 0.5 eV TPV devices exhibit external quantum efficiency as high as 60%, which corresponds to an internal quantum efficiency of 90%, assuming 35% reflection losses. This efficiency is comparable to the value measured for 0.53 eV devices. The ratio of the open circuit voltage to band-gap energy ratio decreases from 0.57 for 0.53 eV devices to 0.48 for 0.5 eV devices.</jats:p>

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