Photoluminescence of oxygen-deficient-type defects in a-SiO2

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Abstract Oxygen-deficient-type defects in a-SiO 2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO 2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at ∼ 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO 2 after high-dose γ-irradiation (dose: 10 MGy).

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