Spin–Vibronic Model for Quantitative Prediction of Reverse Intersystem Crossing Rate in Thermally Activated Delayed Fluorescence Systems

DOI Web Site 被引用文献1件
  • Inkoo Kim
    Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678, Republic of Korea
  • Soon Ok Jeon
    Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678, Republic of Korea
  • Daun Jeong
    Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678, Republic of Korea
  • Hyeonho Choi
    Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678, Republic of Korea
  • Won-Joon Son
    Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678, Republic of Korea
  • Dongwook Kim
    Department of Chemistry, Kyonggi University, Suwon 16227, Republic of Korea
  • Young Min Rhee
    Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
  • Hyo Sug Lee
    Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678, Republic of Korea

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