Desorption properties of Sb on a GaAs (100) surface

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  • Mitsuru Naganuma
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 3−9−11, Midoricho, Musashino−shi,Tokyo 180, Japan
  • Shintaro Miyazawa
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 3−9−11, Midoricho, Musashino−shi,Tokyo 180, Japan
  • Hiroshi Iwasaki
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 3−9−11, Midoricho, Musashino−shi,Tokyo 180, Japan

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<jats:p>Desorption properties of Sb on a GaAs(100) surface are investigated by Auger electron spectroscopy (AES). On surfaces covered with an Sb monolayer, two kinds of desorption process were observed with desorption energies of 2.4 and 2.6 eV. The difference in desorption energies is discussed from the viewpoint of elastic strain energy caused by a pseudomorphic structure of Sb.</jats:p>

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