Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−<i>x</i>Ge<i>x</i> alloys

DOI PDF 被引用文献4件
  • J.-P. Noël
    Division of Physics, National Research Council, Ottawa K1A 0R6, Canada
  • N. L. Rowell
    Division of Physics, National Research Council, Ottawa K1A 0R6, Canada
  • D. C. Houghton
    Division of Physics, National Research Council, Ottawa K1A 0R6, Canada
  • D. D. Perovic
    Division of Physics, National Research Council, Ottawa K1A 0R6, Canada

書誌事項

公開日
1990-09-03
DOI
  • 10.1063/1.103558
公開者
AIP Publishing

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説明

<jats:p>Intense photoluminescence (PL) from strained, epitaxial Si1−xGex alloys grown by molecular beam epitaxy is reported with measured internal quantum efficiencies up to 31% from random alloy layers, single buried strained layers, and multiple quantum wells. Samples deposited at ∼400 °C exhibited low PL intensity, whereas annealing at ∼600 °C enhanced the intensity by as much as two orders of magnitude. This anneal treatment was found to be optimal for removal of grown-in defect complexes without creating a significant density of misfit dislocations. PL peak energies at 4.2 K varied from 620 to 990 meV for Ge fractions from 0.53 to 0.06, respectively. Efficient PL was due to exciton accumulation in the strained Si1−xGex layers of single and multiple quantum wells, where the band gap was locally reduced. Optical transitions associated with the PL occurred without phonon assistance.</jats:p>

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