Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices

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  • K. Fujiwara
    Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan
  • A. Nakamura
    Department of Applied Physics, Faculty of Engineering, Nagoya University, Nagoya 464, Japan
  • Y. Tokuda
    Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan
  • T. Nakayama
    Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan
  • M. Hirai
    Department of Applied Physics, Faculty of Engineering, Tohoku University, Sendai 980, Japan

Description

<jats:p>Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1 nm GaAs single quantum well heterostructures (SQWH’s) confined by GaAs/AlAs short-period superlattices (SPS’s) or ternary AlGaAs alloys with similar Al content, prepared by molecular beam epitaxy. The SQW PL intensity exhibits a single exponential decay with a time constant of 1.6 ns for SQWH’s confined by SPS’s and 0.3 ns for SQWH’s confined by AlGaAs alloys at 77 K. From comparison of the decay rates in both types of the sample, it is found that the radiative recombination efficiency is improved by a factor of about 6 in SPS confined SQWH’s. This higher efficiency is attributed to the improved heterointerfaces in addition to the enhanced radiative recombination rate due to the increased overlap of electron and hole wave functions in the narrow SQW.</jats:p>

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