Dynamic reflection high-energy electron diffraction observation of 3C-SiC(001) surface reconstruction under Si2H6 beam irradiation

DOI PDF 被引用文献1件
  • Tatsuo Yoshinobu
    Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-01, Japan
  • Iwao Izumikawa
    Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-01, Japan
  • Hideaki Mitsui
    Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-01, Japan
  • Takashi Fuyuki
    Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-01, Japan
  • Hiroyuki Matsunami
    Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-01, Japan

書誌事項

公開日
1991-11-25
DOI
  • 10.1063/1.105852
公開者
AIP Publishing

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説明

<jats:p>The transition of 3C-SiC(001) surface superstructures under Si2H6 gas molecular beam irradiation was dynamically observed by reflection high-energy electron diffraction. Starting from the C-terminated c(2×2) structure, the surface structure changed in the order of c(2×2)→(2×1)→(5×2)→(3×2) with continuing irradiation. The amounts of Si2H6 dose required for the transitions c(2×2)→(5×2) and c(2×2)→(3×2) were approximately 1.16 and 1.36 times as much as that for c(2×2)→(2×1). These ratios are interpreted as the relative amount of the constituent Si atoms of the superstructures. This experimental result supports the simple dimer model for (2×1) (1 monolayer of Si) and the additional dimer model for (5×2) (1.2 monolayer) and (3×2) (1.33 monolayer), respectively, as the proper configurations of these surface superstructures.</jats:p>

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