Reactive-ion etching of GaAs and InP using CCl2F2/Ar/O2

DOI PDF 被引用文献8件
  • E. L. Hu
    Bell Telephone Laboratories, Holmdel, New Jersey 07733
  • R. E. Howard
    Bell Telephone Laboratories, Holmdel, New Jersey 07733

書誌事項

公開日
1980-12-01
DOI
  • 10.1063/1.91750
公開者
AIP Publishing

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説明

<jats:p>We describe the reactive ion etching of GaAs, InP, and their derivative compounds using an etch gas composed of CCl2F2, O2, and argon. Etching was generally carried out at pressures between 1 and 10 μ, and power densities below 0.8 W/cm2. Clean etch profiles were obtained with etch rates as high as 0.25 μm/min. A strong dependence of etch rate on pressure was observed with a maximum at 5 μ total pressure. The etch profiles exhibited a ’’negative undercut’’ character which was also dependent upon the total pressure.</jats:p>

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