A verification of immiscibility in InGaAsP quaternary alloys

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Abstract Immiscibility in the InGaAsP quaternary alloys is studied by using liquid phase epitaxy. Growths are performed on GaP substrates instead of GaAs substrates for several melt compositions, which produce lattice matched alloys with GaAs when the growths are done on GaAs substrates. It is found that the immiscibility occurs within a certain solid composition range at 785°C.

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