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High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy
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- B. Lambert
- France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
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- Y. Toudic
- France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
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- Y. Rouillard
- France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
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- M. Baudet
- France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
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- B. Guenais
- France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
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- B. Deveaud
- France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
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- I. Valiente
- France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
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- J. C. Simon
- France Telecom, CNET/LAB/OCM, BP 40 Route de Trégastel 22301 Lannion, France
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Description
<jats:p>We report the molecular beam epitaxy growth of (Al)GaSb/AlSb Bragg mirrors around the 1.55 μm wavelength region. Mirrors with 97% reflectivity have been achieved by using 10 pairs of (Al)GaSb (1048 Å) and AlSb (1207 Å) quarter wavelength layers. This demonstrates the capability of the antimonide system to obtain efficient Bragg mirrors grown on GaAs substrates.</jats:p>
Journal
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- Applied Physics Letters
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Applied Physics Letters 64 (6), 690-691, 1994-02-07
AIP Publishing
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Details 詳細情報について
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- CRID
- 1360861294004172416
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- DOI
- 10.1063/1.111035
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- ISSN
- 10773118
- 00036951
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- Data Source
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- Crossref