Refractory metal silicides for VLSI applications

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書誌事項

公開日
1981-09-01
DOI
  • 10.1116/1.571148
公開者
American Vacuum Society

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説明

<jats:p>Results of a recent program undertaken at Bell Laboratories on silicide gate technology are reviewed with particular reference to the TaSi2/n+ poly-Si structure. This high-conductivity refractory gate structure greatly alleviates the layout and routing problems due to large RC time constants of fine-line poly-Si interconnects. This review contains a discussion of the metallurgical effects, associated with sintering metal and metal–silicon alloy films on polycrystalline silicon, oxidation behavior of silicides, their MOS (process) compatibility, the generic reliability, and trade-offs involved in the selection of a silicide from the group TiSi2, TaSi2, MoSi2 and WSi2.</jats:p>

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