GaInAsP/InP avalanche photodiodes

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  • C. E. Hurwitz
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
  • J. J. Hsieh
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173

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<jats:p>Avalanche photodiodes for detection at 0.9–1.2 μm have been successfully fabricated in epitaxial layers of GaInAsP on InP substrates. Uniform avalanche gains in excess of 12, rise times of 150 psec or less, and low-bias quantum efficiencies of 45% have been measured.</jats:p>

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