Low-threshold 1.25-μm vapor-grown InGaAsP cw lasers

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Abstract

<jats:p>Vapor-grown double-heterojunction lasers of InGaAsP/InP have been prepared with cw room-temperature threshold currents of 85 mA and differential quantum efficiencies exceeding 50% at 1.25 μm. From several lasers, fundamentaal-lateral- and fundamental-longitudinal-mode operation have been observed over moderate current ranges. Over 1000 h of room-temperature cw operation has been observed to date without significant degradation.</jats:p>

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