Low-threshold 1.25-μm vapor-grown InGaAsP cw lasers
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- G. H. Olsen
- RCA Laboratories, Princeton, New Jersey 08540
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- C. J. Nuese
- RCA Laboratories, Princeton, New Jersey 08540
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- M. Ettenberg
- RCA Laboratories, Princeton, New Jersey 08540
Abstract
<jats:p>Vapor-grown double-heterojunction lasers of InGaAsP/InP have been prepared with cw room-temperature threshold currents of 85 mA and differential quantum efficiencies exceeding 50% at 1.25 μm. From several lasers, fundamentaal-lateral- and fundamental-longitudinal-mode operation have been observed over moderate current ranges. Over 1000 h of room-temperature cw operation has been observed to date without significant degradation.</jats:p>
Journal
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- Applied Physics Letters
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Applied Physics Letters 34 (4), 262-264, 1979-02-15
AIP Publishing
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Details 詳細情報について
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- CRID
- 1360861294397063936
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- DOI
- 10.1063/1.90774
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- ISSN
- 10773118
- 00036951
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- Data Source
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- Crossref