Performance Improvement with an Ultrathin p-Type Interfacial Layer in n-Type Vertical Organic Field-Effect Transistors Based on Reduced Graphene Oxide Electrode
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- Kun Qiao
- Division of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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- Shun Arakaki
- Division of Applied Chemistry, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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- Mitsuharu Suzuki
- Division of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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- Ken-ichi Nakayama
- Division of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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説明
Vertical organic field-effect transistors (VOFETs) with a large current on/off ratio and easy fabrication process are highly desirable for future organic electronics. In this paper, we proposed an ultrathin p-type copper (II) phthalocyanine (CuPc) interfacial layer in reduced graphene oxide (rGO)-based VOFETs. The CuPc interfacial layer was sandwiched between the rGO electrode and the
収録刊行物
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- ACS Omega
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ACS Omega 7 (28), 24468-24474, 2022-07-06
American Chemical Society (ACS)
