High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass

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  • Mark A. Hughes
    Joule Physics Laboratory, School of Science, Engineering and Environment, University of Salford, Salford, UK
  • Robert McMaster
    Joule Physics Laboratory, School of Science, Engineering and Environment, University of Salford, Salford, UK
  • John E. Proctor
    Joule Physics Laboratory, School of Science, Engineering and Environment, University of Salford, Salford, UK
  • Daniel W. Hewak
    Optoelectronics Research Centre, University of Southampton, Southampton, UK
  • Takenobu Suzuki
    Optical Functional Materials Laboratory, Toyota Technological Institute, Nagoya, Japan
  • Yasutake Ohishi
    Optical Functional Materials Laboratory, Toyota Technological Institute, Nagoya, Japan

Description

We report the effects of high pressure, up to 10.45 GPa, on the photoluminescence of Bi-doped yttria-alumina-silica (Bi:YAlSi) glass under 532 nm excitation. We identify three emission bands attributed to Bi3+, Bi+ and the controversial NIR emitting Bi centre, BiNIR. As the pressure is increased up to ~6 GPa, an irreversible discontinuity in the trend for emission band energies indicates that an irreversible structural modification occurs. This irreversible discontinuity results in the peak energy of emission bands attributed to Bi+ and BiNIR shifting from those typical of Bi-doped oxide glasses to those observed in Bi-doped gallium-lanthanum-sulfide (Bi:GaLaS) glass. The Bi3+ emission band can be almost eliminated at ~6 GPa, but its intensity increases rapidly as the pressure in further increased. The ability we report here to irreversibly modify the emission of Bi-doped glass using pressure treatment adds an extra degree of freedom in the processing parameters available to researchers looking to optimize the emission from Bi-doped glasses.

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