Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications
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- Jiaxin Chen
- Department of Materials Science Fudan University Shanghai 200433 P. R. China
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- Weixin Ouyang
- Department of Materials Science Fudan University Shanghai 200433 P. R. China
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- Wei Yang
- Department of Materials Science Fudan University Shanghai 200433 P. R. China
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- Jr‐Hau He
- Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 P. R. China
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- Xiaosheng Fang
- Department of Materials Science Fudan University Shanghai 200433 P. R. China
抄録
<jats:title>Abstract</jats:title><jats:p>Ultraviolet photodetectors (UV PDs) with “5S” (high sensitivity, high signal‐to‐noise ratio, excellent spectrum selectivity, fast speed, and great stability) have been proposed as promising optoelectronics in recent years. To realize high‐performance UV PDs, heterojunctions are created to form a built‐in electrical field for suppressing recombination of photogenerated carriers and promoting collection efficiency. In this progress report, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed. Then, strategies of building PDs with lattice‐matched heterojunctions, van der Waals heterostructures, and other heterojunctions are summarized. Finally, several applications based on heterojunction/heterostructure UV PDs are discussed, compromising flexible photodetectors, logic gates, and image sensors. This work draws an outline of diverse materials as well as basic assembly methods applied in heterojunction/heterostructure UV PDs, which will help to bring about new possibilities and call for more efforts to unleash the potential of heterojunctions.</jats:p>
収録刊行物
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- Advanced Functional Materials
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Advanced Functional Materials 30 (16), 1909909-, 2020-02-14
Wiley