Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors

DOI Web Site 参考文献33件 オープンアクセス
  • Akinori Takeyama
    National Institutes for Quantum Science and Technology, 1233 Watanuki-Machi, Takasaki 370-1292, Japan
  • Takahiro Makino
    National Institutes for Quantum Science and Technology, 1233 Watanuki-Machi, Takasaki 370-1292, Japan
  • Yasunori Tanaka
    National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8560, Japan
  • Shin-Ichiro Kuroki
    Research Institute for Nanodevices, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
  • Takeshi Ohshima
    National Institutes for Quantum Science and Technology, 1233 Watanuki-Machi, Takasaki 370-1292, Japan

書誌事項

公開日
2023-10-11
資源種別
journal article
権利情報
  • https://creativecommons.org/licenses/by/4.0/
DOI
  • 10.3390/qubs7040031
公開者
MDPI AG

説明

<jats:p>Silicon carbide junction field-effect transistors (SiC JFETs) are promising candidates as devices applicable to radiation conditions, such as the decommissioning of nuclear facilities or the space environment. We investigate the origin of the threshold volage (Vth) shift and hysteresis of differently structured SiC JFETs. A large positive Vth shift and hysteresis are observed for a depletion-type JFET with a larger depletion layer width. With changing the sweep range of the gate voltage and depletion width, the Vth shift was positively proportional to the difference between the channel depth and depletion width (channel depth–gate depletion width). By illuminating the sub-band gap light, the Vth of the irradiated depletion JFETs recovers close to nonirradiated ones, while a smaller shift and hysteresis are observed for the enhancement type with a narrower width. It can be interpreted that positive charges generated in a gate depletion layer cause a positive Vth shift. When they are swept out from the depletion layer and trapped in the channel, this gives rise to a further Vth shift and hysteresis in gamma-irradiated SiC JFETs.</jats:p>

収録刊行物

参考文献 (33)*注記

もっと見る

関連プロジェクト

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ