Fused Bithiophene Imide Dimer‐Based n‐Type Polymers for High‐Performance Organic Electrochemical Transistors
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- Kui Feng
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
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- Wentao Shan
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
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- Suxiang Ma
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
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- Ziang Wu
- Department of Chemistry Korea University Seoul 136-713 South Korea
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- Jianhua Chen
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
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- Han Guo
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
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- Bin Liu
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
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- Junwei Wang
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
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- Bangbang Li
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
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- Han Young Woo
- Department of Chemistry Korea University Seoul 136-713 South Korea
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- Simone Fabiano
- Laboratory of Organic Electronics Department of Science and Technology Linköping University 60174 Norrköping Sweden
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- Wei Huang
- School of Automation Engineering University of Electronic Science and Technology of China (UESTC) Chengdu Sichuan 611731 China
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- Xugang Guo
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
書誌事項
- 公開日
- 2021-10-04
- 権利情報
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- http://onlinelibrary.wiley.com/termsAndConditions#vor
- DOI
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- 10.1002/ange.202109281
- 公開者
- Wiley
この論文をさがす
説明
<jats:title>Abstract</jats:title><jats:p>The development of n‐type organic electrochemical transistors (OECTs) lags far behind their p‐type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f‐BTI2)‐based n‐type polymers with a branched methyl end‐capped glycol side chain, which exhibit good solubility, low‐lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (<jats:italic>μ</jats:italic><jats:sub>e</jats:sub>) of up to ≈10<jats:sup>−2</jats:sup> cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> and volumetric capacitance (<jats:italic>C</jats:italic>*) as high as 443 F cm<jats:sup>−3</jats:sup>, simultaneously. As a result, the f‐BTI2TEG‐FT‐based OECTs deliver a record‐high maximum geometry‐normalized transconductance of 4.60 S cm<jats:sup>−1</jats:sup> and a maximum <jats:italic>μC</jats:italic>* product of 15.2 F cm<jats:sup>−1</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>. The <jats:italic>μC</jats:italic>* figure of merit is more than one order of magnitude higher than that of the state‐of‐the‐art n‐type OECTs. The emergence of f‐BTI2TEG‐FT brings a new paradigm for developing high‐performance n‐type polymers for low‐power OECT applications.</jats:p>
収録刊行物
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- Angewandte Chemie
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Angewandte Chemie 133 (45), 24400-24407, 2021-10-04
Wiley