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- Amirhassan Shams-Ansari
- John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
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- Guanhao Huang
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL) 2 , CH-1015 Lausanne, Switzerland
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- Lingyan He
- HyperLight 3 , 501 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
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- Zihan Li
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL) 2 , CH-1015 Lausanne, Switzerland
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- Jeffrey Holzgrafe
- John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
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- Marc Jankowski
- E. L. Ginzton Laboratory, Stanford University 4 , 348 Via Pueblo Mall, Stanford, California 94305, USA
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- Mikhail Churaev
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL) 2 , CH-1015 Lausanne, Switzerland
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- Prashanta Kharel
- HyperLight 3 , 501 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
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- Rebecca Cheng
- John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
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- Di Zhu
- John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
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- Neil Sinclair
- John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
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- Boris Desiatov
- John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
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- Mian Zhang
- HyperLight 3 , 501 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
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- Tobias J. Kippenberg
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL) 2 , CH-1015 Lausanne, Switzerland
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- Marko Lončar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
説明
<jats:p>Thin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than the current state of the art resonator (Q-factor of ∼10 million). Yet the material limitations of ion-sliced thin film lithium niobate have not been explored; therefore, it is unclear how high the quality factor can be achieved in this platform. Here, using our newly developed characterization method, we find out that the material limited quality factor of thin film lithium niobate photonic platform can be improved using post-fabrication annealing and can be as high as Q ≈ 1.6 × 108 at telecommunication wavelengths, corresponding to a propagation loss of 0.2 dB/m.</jats:p>
収録刊行物
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- APL Photonics
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APL Photonics 7 (8), 2022-08-01
AIP Publishing