Reduced material loss in thin-film lithium niobate waveguides

  • Amirhassan Shams-Ansari
    John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
  • Guanhao Huang
    Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL) 2 , CH-1015 Lausanne, Switzerland
  • Lingyan He
    HyperLight 3 , 501 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
  • Zihan Li
    Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL) 2 , CH-1015 Lausanne, Switzerland
  • Jeffrey Holzgrafe
    John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
  • Marc Jankowski
    E. L. Ginzton Laboratory, Stanford University 4 , 348 Via Pueblo Mall, Stanford, California 94305, USA
  • Mikhail Churaev
    Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL) 2 , CH-1015 Lausanne, Switzerland
  • Prashanta Kharel
    HyperLight 3 , 501 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
  • Rebecca Cheng
    John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
  • Di Zhu
    John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
  • Neil Sinclair
    John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
  • Boris Desiatov
    John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA
  • Mian Zhang
    HyperLight 3 , 501 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
  • Tobias J. Kippenberg
    Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL) 2 , CH-1015 Lausanne, Switzerland
  • Marko Lončar
    John A. Paulson School of Engineering and Applied Sciences, Harvard University 1 , 29 Oxford Street, Cambridge, Massachusetts 02138, USA

説明

<jats:p>Thin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than the current state of the art resonator (Q-factor of ∼10 million). Yet the material limitations of ion-sliced thin film lithium niobate have not been explored; therefore, it is unclear how high the quality factor can be achieved in this platform. Here, using our newly developed characterization method, we find out that the material limited quality factor of thin film lithium niobate photonic platform can be improved using post-fabrication annealing and can be as high as Q ≈ 1.6 × 108 at telecommunication wavelengths, corresponding to a propagation loss of 0.2  dB/m.</jats:p>

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