Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors
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- Likai Li
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
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- Jason Horng
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
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- Nai Zhou Wang
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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- Guorui Chen
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
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- Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
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- Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
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- Xian Hui Chen
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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- Feng Wang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
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- Yuanbo Zhang
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
書誌事項
- 公開日
- 2017-09-11
- DOI
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- 10.1021/acs.nanolett.7b02624
- 10.48550/arxiv.1701.08041
- 公開者
- American Chemical Society (ACS)
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説明
Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for opto-electronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the charge transport in black phosphorus at room temperature; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs). The effect opens up opportunities for future development of electro-mechanical transducers based on black phosphorus, and we demonstrate strain gauges constructed from black phosphorus thin crystals.
収録刊行物
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- Nano Letters
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Nano Letters 17 (10), 6097-6103, 2017-09-11
American Chemical Society (ACS)
