Short exciton radiative lifetime in submonolayer InGaAs∕GaAs quantum dots

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  • Zhangcheng Xu
    Nankai University Nano-photonics Group, Key Laboratory of Weak-Light Nonlinear Photonics Materials (MOE), TEDA College, , Tianjin 300457, People’s Republic of China and , Chinese Academy of Sciences, Yutian Road No. 500, Shanghai 200083, People’s Republic of China
  • Yating Zhang
    Nankai University Nano-photonics Group, Key Laboratory of Weak-Light Nonlinear Photonics Materials (MOE), TEDA College, , Tianjin 300457, People’s Republic of China and , Chinese Academy of Sciences, Yutian Road No. 500, Shanghai 200083, People’s Republic of China
  • Atsushi Tackeuchi
    Waseda University School of Science & Engineering, , Sinjuku-Ku, Tokyo 169-8555, Japan
  • Yoshiji Horikoshi
    Waseda University School of Science & Engineering, , Sinjuku-Ku, Tokyo 169-8555, Japan
  • Jørn M. Hvam
    Technical University of Denmark Department of Communications, Optics and Materials, and Nano. DTU, , DK-2800 Lyngby, Denmark

書誌事項

公開日
2008-02-11
DOI
  • 10.1063/1.2839312
公開者
AIP Publishing

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説明

<jats:p>The exciton radiative lifetime in submonolayer (SML) InGaAs∕GaAs quantum dots (QDs) grown at 500°C was measured by using time-resolved photoluminescence from 10to260K. The radiative lifetime is around 90ps and is independent of temperature below 50K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30nm in diameter and embedded within the lateral InGaAs QW.</jats:p>

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