High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

DOI PDF 被引用文献1件
  • Kohki Mukai
    Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
  • Yoshiaki Nakata
    Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
  • Koji Otsubo
    Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
  • Mitsuru Sugawara
    Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
  • Naoki Yokoyama
    Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
  • Hiroshi Ishikawa
    Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

書誌事項

公開日
2000-06-05
DOI
  • 10.1063/1.126644
公開者
AIP Publishing

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説明

<jats:p>This letter reports on the high characteristic temperature of InGaAs/GaAs quantum-dot lasers at room temperature. Self-assembled quantum dots were grown using low-growth-rate molecularbeam epitaxy, and continuous-wave lasing occurred at the dot ground level of 1.26 μm at 25 °C. The characteristic temperature of the threshold currents was 120 K, and ground-level lasing was observed up to 100 °C. Comparing the lasing performances and the spontaneous emission spectra with those of 1.3 μm emission dots, we found that the large volume density, deep potential, and high quantum efficiency were key points for improving the temperature characteristics.</jats:p>

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