Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength

<jats:p>Near-infrared (NIR) light with a wavelength of 650–950 nm is used for various biomedical applications. Although NIR emitters are typically based on GaAs-related materials, they contain toxic elements, and the emission wavelength can easily shift during the device operation due to temperature changes and current injection levels. On the other hand, Tm3+, which is one of the rare-earth ions, can generate ultra-stable NIR luminescence with a wavelength of ∼800nm, based on 3H4–3H6 transitions in a 4f shell, and we have recently focused on Tm-doped GaN (GaN:Tm) based light-emitting diodes (LEDs) as novel NIR emitters. In this paper, we present a demonstration of a NIR-LED based on GaN:Tm grown by the organometallic vapor phase epitaxy method with optimized growth conditions and structures, where the parasitic reaction is well suppressed. NIR luminescence from the GaN:Tm-based LED is derived from 3H4–3H6 transitions of Tm3+ ions and consists of three dominant peaks at 795, 806, and 814 nm. The turn-on voltage of the NIR-LED is ∼6.9 V, and it is significantly lower than the previously reported electroluminescent devices based on GaN:Tm with impact ionization processes. From a current dependence of the electroluminescence spectra and temperature-dependent photoluminescence for the NIR-LED, the peak shifts are determined to be &lt;7.6 pm/mA and ∼1.3 pm/K, respectively.</jats:p>