Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band

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公開日
2010-01-25
DOI
  • 10.1063/1.3292591
公開者
AIP Publishing

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説明

We report the growth of self-assembled InAs/GaAs quantum dots (QDs) on germanium-on-insulator-on-silicon (GeOI) substrate by metal organic chemical vapor deposition. We demonstrate that the introduction of a single QD layer can act as an anti-phase-domain filter resulting in GaAs/GeOI layers with high structural quality and low surface roughness. High density (4×1010 cm−2) QDs were obtained with emission at 1.3 μm, narrow peak linewidth (33 meV), and identical photoluminescence intensity at room temperature similar to QDs obtained on conventional GaAs substrate. These results show the feasibility of the GeOI platform for the monolithic integration of QD-based lasers on silicon.

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