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- Daniel Granados
- Instituto de Microelectrónica de Madrid, CNM, CSIC, Isaac Newton, 8, Tres Cantos, 28760-Madrid, Spain
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- Jorge M Garcı́a
- Instituto de Microelectrónica de Madrid, CNM, CSIC, Isaac Newton, 8, Tres Cantos, 28760-Madrid, Spain
書誌事項
- 公開日
- 2003-04-14
- DOI
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- 10.1063/1.1566799
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The effect of growth conditions on the morphological properties of InAs/GaAs(001) quantum dots covered by a thin (<3 nm) GaAs cap has been studied by atomic force microscopy. Each dot turns into an elongated nanostructure at 540 °C upon deposition of the cap in As4 atmosphere, while structures with two humps are obtained when capping at 500 °C. The use of As2 atmosphere instead of As4 at 500 °C leads to the formation of quantum rings. Photoluminescence spectroscopy and polarization photoluminescence (PL) at 15 K show dramatic changes due to the different kinds of confinement. This allows the possibility of tailoring PL emission by controlling the size and shape.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 82 (15), 2401-2403, 2003-04-14
AIP Publishing