Selective-area vapor-liquid-solid growth of tunable InAsP quantum dots in nanowires

  • Dan Dalacu
    National Research Council Institute for Microstructural Sciences, , Ottawa K1A 0R6, Canada
  • Khaled Mnaymneh
    National Research Council Institute for Microstructural Sciences, , Ottawa K1A 0R6, Canada
  • Xiaohua Wu
    National Research Council Institute for Microstructural Sciences, , Ottawa K1A 0R6, Canada
  • Jean Lapointe
    National Research Council Institute for Microstructural Sciences, , Ottawa K1A 0R6, Canada
  • Geof C. Aers
    National Research Council Institute for Microstructural Sciences, , Ottawa K1A 0R6, Canada
  • Philip J. Poole
    National Research Council Institute for Microstructural Sciences, , Ottawa K1A 0R6, Canada
  • Robin L. Williams
    National Research Council Institute for Microstructural Sciences, , Ottawa K1A 0R6, Canada

書誌事項

公開日
2011-06-20
DOI
  • 10.1063/1.3600777
公開者
AIP Publishing

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説明

<jats:p>A process is described where the position, size, and cladding of an InP nanowire with an embedded InAsP quantum dot are determined by design through lithography, processing, and growth. The vapor-liquid-solid growth mode on a patterned substrate is used to grow the InP core and defines the quantum dot size to better than ±2 nm while selective-area growth is used to define the cladding thickness. The clad nanowires emit efficiently in the range λ=0.95–1.15 μm. Photoluminescence measurements are used to quantify the dependence of the excitonic energy level structure on quantum dot size for diameters 10–40 nm.</jats:p>

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