Anisotropic resistivity of thin films due to quantum electron scattering from anisotropic surface roughness
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- M. C. Salvadori
- University of São Paulo Institute of Physics, , C.P. 66318, CEP 05315-970 São Paulo SP, Brazil
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- M. Cattani
- University of São Paulo Institute of Physics, , C.P. 66318, CEP 05315-970 São Paulo SP, Brazil
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- F. S. Teixeira
- University of São Paulo Institute of Physics, , C.P. 66318, CEP 05315-970 São Paulo SP, Brazil
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- R. S. Wiederkehr
- University of São Paulo Institute of Physics, , C.P. 66318, CEP 05315-970 São Paulo SP, Brazil
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- I. G. Brown
- Lawrence Berkeley National Laboratory , 1 Cyclotron Road, Berkeley, California 94720
書誌事項
- 公開日
- 2007-02-26
- DOI
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- 10.1116/1.2699254
- 公開者
- American Vacuum Society
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説明
<jats:p>Platinum thin films with thickness in the range of 0.4–12nm were formed by filtered vacuum arc plasma deposition on a substrate with anisotropic roughness. The electrical resistivity was measured in directions parallel and perpendicular to the surface modulation as a function of film thickness, and the resistivity was found to be anisotropic with the degree of anisotropy increasing with decreasing film thickness. The very small thickness of the films calls for a quantum model for film resistivity, and it is shown that the measured resistivity can be interpreted as due to quantum electron scattering by the thin film anisotropic surface roughness.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 25 (2), 330-333, 2007-02-26
American Vacuum Society