Reduction of contact resistance by selective contact doping in fullerene n-channel organic field-effect transistors
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- Sanjeev Singh
- Center for Organic Photonics and Electronics and School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30332-0250, USA
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- Swagat K. Mohapatra
- Center for Organic Photonics and Electronics and School of Chemistry and Biochemistry, Georgia Institute of Technology 2 , Atlanta, Georgia 30332-0400, USA
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- Asha Sharma
- Center for Organic Photonics and Electronics and School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30332-0250, USA
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- Canek Fuentes-Hernandez
- Center for Organic Photonics and Electronics and School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30332-0250, USA
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- Stephen Barlow
- Center for Organic Photonics and Electronics and School of Chemistry and Biochemistry, Georgia Institute of Technology 2 , Atlanta, Georgia 30332-0400, USA
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- Seth R. Marder
- Center for Organic Photonics and Electronics and School of Chemistry and Biochemistry, Georgia Institute of Technology 2 , Atlanta, Georgia 30332-0400, USA
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- Bernard Kippelen
- Center for Organic Photonics and Electronics and School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30332-0250, USA
書誌事項
- 公開日
- 2013-04-15
- 権利情報
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- http://creativecommons.org/licenses/by/3.0/deed.en_US
- DOI
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- 10.1063/1.4802237
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>We have investigated the contact-doping effect on high performance n-channel C60 organic field-effect transistors (OFETs) using the air-stable rhodocene dimer as an n-type dopant. The average charge mobility improved from a value of 0.48 cm2/(Vs) in a reference device to 1.65 cm2/(Vs) for contact-doped devices with a channel length of 25 μm. The operational stability of contact-doped OFETs under continuous stress bias was found similar to the reference devices.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 102 (15), 2013-04-15
AIP Publishing