Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

DOI PDF 被引用文献5件
  • K. McGroddy
    University of California Materials Department, , Santa Barbara, California 93106-5050, USA
  • A. David
    University of California Materials Department, , Santa Barbara, California 93106-5050, USA
  • E. Matioli
    University of California Materials Department, , Santa Barbara, California 93106-5050, USA
  • M. Iza
    University of California Materials Department, , Santa Barbara, California 93106-5050, USA
  • S. Nakamura
    University of California Materials Department, , Santa Barbara, California 93106-5050, USA
  • S. DenBaars
    University of California Materials Department, , Santa Barbara, California 93106-5050, USA
  • J. S. Speck
    University of California Materials Department, , Santa Barbara, California 93106-5050, USA
  • C. Weisbuch
    University of California Materials Department, , Santa Barbara, California 93106-5050, USA
  • E. L. Hu
    University of California Materials Department, , Santa Barbara, California 93106-5050, USA

書誌事項

公開日
2008-09-08
DOI
  • 10.1063/1.2978068
公開者
AIP Publishing

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説明

<jats:p>Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular-resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. Increases in directional emission as high as 3.5 times are achieved by taking advantage of this directionality and guided mode control.</jats:p>

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