Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS

Tamotsu Morimoto, Hiroto Ohtake, Tomiko Wanifuchi

doi:10.1116/1.4930244

Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS

DOI PDF 被引用文献2件

Tamotsu Morimoto

Tokyo Electron, Ltd. , 650 Mitsuzawa, Hosaka-cho, Nirasaki, Yamanashi 407-0192, Japan
Hiroto Ohtake

Tokyo Electron America, Inc. , 20175 NW Amberglen CT Suite 140, Beaverton, Oregon 97006
Tomiko Wanifuchi

Tokyo Electron Miyagi, Ltd. , 1 Techno-hills, Taiwa, Kurokawa, Miyagi 981-3629, Japan

書誌事項

公開日: 2015-09-01

DOI

10.1116/1.4930244

公開者: American Vacuum Society

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説明

<jats:p>The authors investigated the mechanisms of Si p+/n junction damage caused by N2/H2 plasma during organic implantation mask etching. The junction leakage current of a p+/n-well diode rose when the authors reduced the plasma-source power and increased the radio-frequency (RF) bias power, whereas it did not rise after they increased hydrogen ratio of the N2/H2 plasma gas. This indicates that ion energy and dose have a greater influence on junction damage than the density of hydrogen radicals does. Accordingly, the authors suggest that a high etching rate and low ion energy, which correspond to a high hydrogen ratio and low RF bias, are the best combination for low-damage organic block etching.</jats:p>