Effect of interlayer coupling in CoFeB/Ta/NiFe free layers on the critical switching current of MgO-based magnetic tunnel junctions
-
- Kangho Lee
- Qualcomm Incorporated 1 Advanced Technology, , San Diego, California 92121, USA
-
- Wei-Chuan Chen
- Qualcomm Incorporated 2 , HsinChu, 300, Taiwan
-
- Xiaochun Zhu
- Qualcomm Incorporated 1 Advanced Technology, , San Diego, California 92121, USA
-
- Xia Li
- Qualcomm Incorporated 1 Advanced Technology, , San Diego, California 92121, USA
-
- Seung H. Kang
- Qualcomm Incorporated 1 Advanced Technology, , San Diego, California 92121, USA
書誌事項
- 公開日
- 2009-07-15
- DOI
-
- 10.1063/1.3184423
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>This paper reports the current-induced magnetization reversal characteristics of MgO-based magnetic tunnel junctions (MTJs) with CoFeB/Ta/NiFe composite free layers designed for spin-transfer-torque magnetoresistive random access memory. As the Ta spacer thickness (≤8 Å) was increased, the MTJs embedded into nanoscale integrated circuits demonstrated not only higher tunneling magnetoresistance ratios but also lower intrinsic critical switching currents. This suggests that promoting weak interlayer exchange coupling between CoFeB and NiFe is desirable for reducing the intrinsic critical switching current of CoFeB/Ta/NiFe. While the energy barrier was also reduced with a thicker Ta spacer, it was maintained at an adequate level (∼57kBT) even for the thickest Ta (8 Å) of this work.</jats:p>
収録刊行物
-
- Journal of Applied Physics
-
Journal of Applied Physics 106 (2), 2009-07-15
AIP Publishing