The prediction of hole mobility in organic semiconductors and its calibration based on the grain-boundary effect
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- Jin Woo Park
- Samsung Advanced Institute of Technology
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- Kyu Il Lee
- Samsung Advanced Institute of Technology
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- Youn-Suk Choi
- Samsung Advanced Institute of Technology
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- Jung-Hwa Kim
- Samsung Advanced Institute of Technology
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- Daun Jeong
- Samsung Advanced Institute of Technology
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- Young-Nam Kwon
- Samsung Advanced Institute of Technology
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- Jong-Bong Park
- Samsung Advanced Institute of Technology
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- Ho Young Ahn
- Samsung Advanced Institute of Technology
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- Jeong-Il Park
- Samsung Advanced Institute of Technology
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- Hyo Sug Lee
- Samsung Advanced Institute of Technology
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- Jaikwang Shin
- Samsung Advanced Institute of Technology
抄録
<p>A new reliable computational model to predict the hole mobility of poly-crystalline organic semiconductors in thin films was developed.</p>
収録刊行物
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- Physical Chemistry Chemical Physics
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Physical Chemistry Chemical Physics 18 (31), 21371-21380, 2016
Royal Society of Chemistry (RSC)