Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells

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  • R. Kudrawiec
    Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • G. Se̢k
    Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • K. Ryczko
    Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • J. Misiewicz
    Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • J. C. Harmand
    Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91460 Marcoussis, France

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<jats:p>GaAsSb–GaInAs/GaAs bilayer quantum wells which consist of two adjacent layers of GaAsSb and GaInAs sandwiched between GaAs barriers have been investigated by photoreflectance (PR) spectroscopy. The oscillator strengths of optical transitions in such multiheterointerface structures have been determined from the experiment and compared with the results of envelope function calculations. Additionally, the broadening of the PR features has been analyzed and a correlation has been found with the character of the transitions: the broadening increases significantly when the type of the transition changes from direct to indirect.</jats:p>

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