Characterization of Si/GexSi1−x structures by micro-Raman imaging

DOI PDF 被引用文献9件
  • S. Nakashima
    National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • T. Yamamoto
    Sumitomo Chemical Company Ltd., 6 Kitahara Tsukuba, Ibaraki 300-3294, Japan
  • A. Ogura
    Silicon Systems Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
  • K. Uejima
    Silicon Systems Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

書誌事項

公開日
2004-04-05
DOI
  • 10.1063/1.1695443
公開者
AIP Publishing

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説明

<jats:p>Ge x Si 1−x are characterized by Raman microspectroscopy. The strain of the 17.5-nm-thick Si layer was examined through deep UV Raman measurements. The depth profile of the GexSi1−x alloy composition and crystallinity was determined by visible Raman image measurement of the sample cross section. These measurements give results consistent with transmission electron microscopy and secondary ion mass spectrometry analyses.</jats:p>

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