Edge‐Epitaxial Growth of 2D NbS<sub>2</sub>‐WS<sub>2</sub> Lateral Metal‐Semiconductor Heterostructures
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- Yu Zhang
- CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 China
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- Lei Yin
- CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 China
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- Junwei Chu
- CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 China
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- Tofik Ahmed Shifa
- CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 China
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- Jing Xia
- key Laboratory of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 China
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- Feng Wang
- CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 China
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- Yao Wen
- University of Chinese Academy of Science No.19A Yuquan Road Beijing 100049 China
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- Xueying Zhan
- CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 China
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- Zhenxing Wang
- CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 China
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- Jun He
- CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 China
書誌事項
- 公開日
- 2018-08-22
- 権利情報
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- http://onlinelibrary.wiley.com/termsAndConditions#vor
- DOI
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- 10.1002/adma.201803665
- 公開者
- Wiley
この論文をさがす
説明
<jats:title>Abstract</jats:title><jats:p>2D metal‐semiconductor heterostructures based on transition metal dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such as contact engineering and high‐frequency devices. Although, a series of p–n junctions utilizing semiconducting TMDs have been constructed hitherto, the realization of such a scheme using 2D metallic analogs has not been reported. Here, the synthesis of uniform monolayer metallic NbS<jats:sub>2</jats:sub> on sapphire substrate with domain size reaching to a millimeter scale via a facile chemical vapor deposition (CVD) route is demonstrated. More importantly, the epitaxial growth of NbS<jats:sub>2</jats:sub>‐WS<jats:sub>2</jats:sub> lateral metal‐semiconductor heterostructures via a “two‐step” CVD method is realized. Both the lateral and vertical NbS<jats:sub>2</jats:sub>‐WS<jats:sub>2</jats:sub> heterostructures are achieved here. Transmission electron microscopy studies reveal a clear chemical modulation with distinct interfaces. Raman and photoluminescence maps confirm the precisely controlled spatial modulation of the as‐grown NbS<jats:sub>2</jats:sub>‐WS<jats:sub>2</jats:sub> heterostructures. The existence of the NbS<jats:sub>2</jats:sub>‐WS<jats:sub>2</jats:sub> heterostructures is further manifested by electrical transport measurements. This work broadens the horizon of the in situ synthesis of TMD‐based heterostructures and enlightens the possibility of applications based on 2D metal‐semiconductor heterostructures.</jats:p>
収録刊行物
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- Advanced Materials
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Advanced Materials 30 (40), 1803665-, 2018-08-22
Wiley