Electron states associated with partial dislocations in silicon
Description
<jats:title>Abstract</jats:title><jats:p>The electron energy bands associated with the glide set 90° and 30° partials in silicon are calculated. Rotations of bonds and shifts in bond lengths are taken into account. The results suggest the possibility of dislocation cores without broken bonds.</jats:p>
Journal
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- physica status solidi (b)
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physica status solidi (b) 92 (1), 83-89, 1979-03
Wiley
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Details 詳細情報について
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- CRID
- 1361137044758665728
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- ISSN
- 15213951
- 03701972
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- Data Source
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- Crossref